The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2023
Filed:
Aug. 12, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Huai-Ying Huang, New Taipei, TW;
Yu-Ming Lin, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 10/00 (2023.01); H01L 29/786 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H10B 10/12 (2023.02); H01L 27/0922 (2013.01); H01L 29/78675 (2013.01); H10B 10/18 (2023.02);
Abstract
A memory device is provided. The memory device includes a plurality of memory cells. Each memory cell includes a latch circuit formed of N-type field effect transistors (NFETs) and P-type field effect transistors (PFETs). The NFETs are formed at a surface of a semiconductor substrate, and the PFETs are disposed at an elevated level over the NFETs.