The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2023

Filed:

May. 27, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Shih-Hao Lin, Hsinchu, TW;

Chia-Hung Chou, Hsinchu, TW;

Chih-Hsuan Chen, Hsinchu, TW;

Ping-En Cheng, Hsinchu, TW;

Hsin-Wen Su, Yunlin County, TW;

Chien-Chih Lin, Taichung, TW;

Szu-Chi Yang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6681 (2013.01); H01L 21/823431 (2013.01); H01L 21/823468 (2013.01); H01L 29/6656 (2013.01); H01L 29/66553 (2013.01); H01L 29/7851 (2013.01);
Abstract

A semiconductor structure includes: a semiconductor substrate; a first source/drain feature and a second source/drain feature over the semiconductor substrate; and semiconductor layers extending longitudinally in a first direction and connecting the first source/drain feature and the second source/drain feature. The semiconductor layers are spaced apart from each other in a second direction perpendicular to the first direction. The semiconductor structure further includes inner spacers each between two adjacent semiconductor layers; metal oxide layers interposing between the inner spacers and the semiconductor layers; and a gate structure wrapping around the semiconductor layers and the metal oxide layers.


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