The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2023
Filed:
Apr. 11, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Ta-Chun Lin, Hsinchu, TW;
Kuo-Hua Pan, Hsinchu, TW;
Jhon Jhy Liaw, Hsinchu County, TW;
Shien-Yang Wu, Hsin-Chu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD, Hsinchu, TW;
Abstract
A method includes forming a first channel region, a second channel region, and a third channel region over a substrate, depositing a first interfacial layer over the first, second, and third channel regions, removing the first interfacial layer from the first and second channel regions, depositing a second interfacial layer over the first and second channel regions, thinning a thickness of the second interfacial layer over the first channel region, depositing a high-k dielectric layer over the first, second, and third channel regions, and forming a gate electrode layer over the first, second, and third channel regions.