The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2023

Filed:

May. 07, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chien-Li Kuo, Hsinchu, TW;

Chin-Fu Kao, Taipei, TW;

Chen-Shien Chen, Zhubei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/48 (2006.01); H01L 23/367 (2006.01); H01L 23/31 (2006.01); H01L 23/538 (2006.01); H01L 23/00 (2006.01); H01L 21/56 (2006.01);
U.S. Cl.
CPC ...
H01L 21/4882 (2013.01); H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/565 (2013.01); H01L 23/3128 (2013.01); H01L 23/3675 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 23/5389 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 21/56 (2013.01); H01L 24/27 (2013.01); H01L 2224/214 (2013.01);
Abstract

A method for forming a semiconductor device package is provided. The method includes bonding a semiconductor device to a package substrate; placing a metal lid over the semiconductor device and the package substrate with a metal thermal interface material (TIM) provided between the metal lid and the semiconductor device; heating the metal TIM to melt the metal TIM; pressing the metal lid downward so that the molten metal TIM flows toward the boundary of the semiconductor device, and the outermost point of the lateral sidewall of the molten metal TIM extends beyond the boundary of the semiconductor device; lifting the metal lid upward so that the molten metal TIM flows back, and the outermost point of the lateral sidewall is within the boundary of the semiconductor device; and bonding the metal lid to the semiconductor device through the metal TIM by curing the molten metal TIM.


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