The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2023
Filed:
Feb. 02, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Tao-Hsin Chen, Tainan, TW;
Chia-Yu Lee, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); G03F 7/00 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70916 (2013.01); G03F 7/70033 (2013.01); G03F 7/7085 (2013.01); G03F 7/70808 (2013.01); G03F 7/70866 (2013.01); G03F 7/70933 (2013.01); H01L 21/68785 (2013.01);
Abstract
A method comprises loading a wafer onto a wafer chuck of a lithography apparatus, projecting an extreme ultraviolet light through an opening of a frame structure of the lithography apparatus, onto the wafer, and introducing an airflow from an air curtain module on the wafer chuck toward the frame structure, wherein the air curtain module surrounds the wafer. The airflow forms an air curtain around the wafer, and shields the wafer from contaminants from the frame structure or a wafer stage.