The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2023
Filed:
Apr. 29, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Wen-Chang Hsueh, Taoyuan, TW;
Huan-Ling Lee, Hsinchu County, TW;
Chia-Jen Chen, Jhudong Township, Hsinchu County, TW;
Hsin-Chang Lee, Zhubei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method for manufacturing a reticle is provided. The method includes forming a first reflective multilayer over a mask substrate. The method also includes forming a capping layer over the first reflective ML. The method further includes depositing a first absorption layer over the capping layer. In addition, the method includes depositing an etch stop layer over the first absorption layer. The method also includes forming a second reflective multilayer (ML) over the etch stop layer. The method further includes forming a second absorption layer over the second reflective ML. In addition, the method includes forming an opening through the second absorption layer and the second reflective ML until the etch stop layer is exposed. The method also includes etching the etch stop layer and the first absorption layer through the opening until the capping layer is exposed.