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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11735635 B1

PDFFull Text
Date of Patent:
Aug. 22, 2023

Filed:

Jul. 19, 2021

Semiconductor device and fabrication method thereof

Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Chun-Han Tsao, New Taipei, TW;

Chih-Ming Chen, Hsinchu, TW;

Han-Yu Chen, Hsinchu County, TW;

Szu-Yu Wang, Hsinchu, TW;

Lan-Lin Chao, Taipei County, TW;

Cheng-Yuan Tsai, Hsin-Chu County, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Haynes and Boone, LLP

Primary Examiner:

Theresa T Doan

Int. Cl.
CPC ...
H01L 29/94 (2006.01); H01L 29/76 (2006.01); H01L 31/119 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01); H01L 49/02 (2006.01); H01L 21/02 (2006.01); H10B 43/30 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H01L 29/42344 (2013.01); H01L 21/02063 (2013.01); H01L 21/02068 (2013.01); H01L 21/28052 (2013.01); H01L 21/28518 (2013.01); H01L 21/76834 (2013.01); H01L 21/76856 (2013.01); H01L 28/00 (2013.01); H01L 29/665 (2013.01); H10B 43/30 (2023.02); H10B 43/40 (2023.02);
Abstract

A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a semiconductor structure, a dielectric layer, a metal-semiconductor compound film and a cover layer. The semiconductor structure has an upper surface and a lateral surface. The dielectric layer encloses the lateral surface of the semiconductor structure and exposes the upper surface of the semiconductor structure. The metal-semiconductor compound film is on the semiconductor structure, wherein the dielectric layer exposes a portion of a surface of the metal-semiconductor compound film. The cover layer encloses the portion of the surface of the metal-semiconductor compound film exposed by the dielectric layer, and exposes the dielectric layer.

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