The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2023

Filed:

Jun. 07, 2021
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Tzer-Min Shen, Hsinchu, TW;

Zhiqiang Wu, Hsinchu County, TW;

Chung-Cheng Wu, Hsin-Chu County, TW;

Ching-Wei Tsai, Hsinchu, TW;

Kuan-Lun Cheng, Hsin-Chu, TW;

Chih-Hao Wang, Hsinchu County, TW;

Min Cao, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 21/762 (2006.01); H01L 21/84 (2006.01); H01L 29/423 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1207 (2013.01); H01L 21/76275 (2013.01); H01L 21/76283 (2013.01); H01L 21/823807 (2013.01); H01L 21/823821 (2013.01); H01L 21/845 (2013.01); H01L 27/0924 (2013.01); H01L 27/1211 (2013.01); H01L 29/1033 (2013.01); H01L 29/42392 (2013.01); H01L 29/785 (2013.01); H01L 29/7869 (2013.01); H01L 21/823878 (2013.01); H01L 29/045 (2013.01); H01L 29/0673 (2013.01); H01L 29/7853 (2013.01);
Abstract

The present disclosure provides a semiconductor structure. The semiconductor structure includes a semiconductor substrate having a first region and a second region; a first fin active region of a first semiconductor material disposed within the first region, oriented in a first direction, wherein the first fin active region has a <100> crystalline direction along the first direction; and a second fin active region of a second semiconductor material disposed within the second region and oriented in the first direction, wherein the second fin active region has a <110> crystalline direction along the first direction.


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