The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2023
Filed:
Nov. 04, 2021
International Business Machines Corporation, Armonk, NY (US);
Ruqiang Bao, Niskayuna, NY (US);
Jingyun Zhang, Albany, NY (US);
Koji Watanabe, Yokohama, JP;
Jing Guo, Niskayuna, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor structure includes a semiconductor substrate, with first, second, and third field effect transistors (FETs) formed on the substrate. A gate of the first FET includes a gate electrode, a first work function metal (WFM) layered with a first interfacial layer (IL) and a first high-k dielectric (HK); a gate of the second FET includes the first WFM layered with a second IL, a second HK, and a first dipole material; and a gate of the third FET includes the first WFM layered with a third IL, a third HK, the first dipole material, and a second dipole material. The first FET does not include the first dipole material and does not include the second dipole material, and the second FET does not include the second dipole material.