The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2023

Filed:

Apr. 29, 2021
Applicant:

Ecole Polytechnique Federale DE Lausanne (Epfl), Lausanne, CH;

Inventors:

Simone Frasca, Lausanne, CH;

Edoardo Charbon, Jouxtens-Mézery, CH;

Sandro Carrara, La Conversion, CH;

Rebecca Leghziel, Lausanne, CH;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/3065 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76898 (2013.01); H01L 21/0337 (2013.01); H01L 21/30655 (2013.01);
Abstract

A method for manufacturing vias in a silicon wafer, the silicon wafer having a <110> crystal orientation, and having a <111> plane that is perpendicular to a surface of the wafer, tilted by 35.26°, the method comprising the steps of providing a mask having a rhomboidal-shaped opening onto a surface of the silicon wafer, such that edges of the rhomboidal-shaped opening line up with a <111> plane of a crystalline structure of the silicon wafer, etching a hole in the silicon wafer at the rhomboidal-shaped opening, and polishing the hole after the etching by a anisotropic etching.


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