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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11735470 B1

PDFFull Text
Date of Patent:
Aug. 22, 2023

Filed:

Nov. 13, 2020

Method for forming semiconductor device structure with source/drain contact

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chun-Hung Liao, Taichung, TW;

Lin-Yu Huang, Hsinchu, TW;

Chia-Hao Chang, Hsinchu, TW;

Huang-Lin Chao, Hillsboro, OR (US);

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Daniel Luke

Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76819 (2013.01); H01L 21/7684 (2013.01); H01L 21/76883 (2013.01); H01L 21/823431 (2013.01); H01L 23/5226 (2013.01); H01L 29/401 (2013.01); H01L 29/41791 (2013.01); H01L 29/66795 (2013.01); H01L 21/76844 (2013.01); H01L 21/823475 (2013.01); H01L 27/0886 (2013.01);
Abstract

A semiconductor device structure includes a fin structure formed over a substrate. The structure also includes a gate structure formed across the fin structure. The structure also includes a source/drain structure formed beside the gate structure. The structure also includes a contact structure formed over the source/drain structure. The structure also includes a dielectric structure extending into the contact structure. The dielectric structure and the source/drain structure are separated by the contact structure.

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