The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2023
Filed:
Aug. 13, 2021
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Jian-Jou Lian, Tainan, TW;
Li-Min Chen, Zhubei, TW;
Neng-Jye Yang, Hsinchu, TW;
Ming-Hsi Yeh, Hsinchu, TW;
Shun Wu Lin, Taichung, TW;
Kuo-Bin Huang, Jhubei, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 21/3213 (2006.01); H01L 21/02 (2006.01); H01L 29/08 (2006.01); H01L 29/78 (2006.01); H01L 29/165 (2006.01); H01L 29/267 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28247 (2013.01); H01L 21/02521 (2013.01); H01L 21/02532 (2013.01); H01L 21/32134 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/267 (2013.01); H01L 29/66545 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01); H01L 29/7848 (2013.01); H01L 29/7851 (2013.01);
Abstract
An etchant is utilized to remove a semiconductor material. In some embodiments an oxidizer is added to the etchant in order to react with surrounding semiconductor material and form a protective layer. The protective layer is utilized to help prevent damage that could occur from the other components within the etchant.