The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2023
Filed:
Feb. 08, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chun-Lang Chen, Hsinchu, TW;
Chih-Chiang Tu, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of manufacturing a reticle includes depositing an etch stop layer over a substrate; and depositing an absorber layer over the etch stop layer. The method further includes depositing a hard mask layer over the absorber layer, wherein the hard mask layer includes tantalum. The method includes patterning the hard mask layer. The method further includes performing a first etch process to remove a portion of the absorber layer underneath the patterned hard mask. The method includes performing a second etch process to partially remove a portion of a thickness of an etch stop layer underneath the removed portion of the absorber layer, wherein performing the third etch process comprises maintaining a remaining thickness of the etch stop layer underneath the removed portion of the absorber. The method further includes maintaining the remaining thickness of the etch stop layer through a termination of the method of manufacturing the reticle.