The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2023

Filed:

Jul. 29, 2020
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Cong Trinh, Santa Clara, CA (US);

Mihaela A. Balseanu, Sunnyvale, CA (US);

Maribel Maldonado-Garcia, San Jose, CA (US);

Ning Li, San Jose, CA (US);

Mark Saly, Santa Clara, CA (US);

Bhaskar Jyoti Bhuyan, San Jose, CA (US);

Keenan N. Woods, San Ramon, CA (US);

Lisa J. Enman, Sunnyvale, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/02 (2006.01); H01L 21/56 (2006.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
C23C 16/45542 (2013.01); C23C 16/0209 (2013.01); C23C 16/45546 (2013.01); C23C 16/45553 (2013.01); H01L 21/56 (2013.01); H10N 70/023 (2023.02);
Abstract

Methods of depositing an encapsulation stack without damaging underlying layers are discussed. The encapsulation stacks are highly conformal, have low etch rates, low atomic oxygen concentrations, good hermeticity and good adhesion. These films may be used to protect chalcogen materials in PCRAM devices. Some embodiments utilize a two-step process comprising a first ALD process to form a protective layer and a second plasma ALD process to form an encapsulation layer.


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