The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2023

Filed:

Apr. 30, 2020
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yuan-Hsuan Chen, Tainan, TW;

Kei-Wei Chen, Tainan, TW;

Ying-Lang Wang, Tien-Chung Village, TW;

Kuo-Hsiu Wei, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B24B 49/05 (2006.01); H01L 21/306 (2006.01); H01L 21/304 (2006.01); B24B 49/04 (2006.01); B24B 37/005 (2012.01); B24B 49/00 (2012.01); B24B 37/04 (2012.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30625 (2013.01); B24B 37/005 (2013.01); B24B 37/04 (2013.01); B24B 49/00 (2013.01); B24B 49/04 (2013.01); B24B 49/05 (2013.01); H01L 21/304 (2013.01); H01L 22/12 (2013.01); H01L 22/20 (2013.01);
Abstract

An apparatus includes a first metrology tool configured to measure an initial thickness of a wafer. The apparatus includes a controller connected to the first metrology tool and configured to calculate a polishing time based on a material removal rate, a predetermined thickness and the initial thickness of the wafer. The apparatus includes a polishing tool connected to the controller and configured to polish the wafer for a first duration equal to the polishing time. The apparatus includes a second metrology tool connected to the controller and configured to measure a polished thickness. The controller is configured for receiving the initial thickness from the first metrology tool and the polished thickness from the second metrology tool, updating the material removal rate based on the predetermined thickness, the polishing time and the polished thickness, and calculating an etching time for etching the polished wafer using the polished thickness.


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