The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2023

Filed:

Dec. 09, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Harry-Hak-Lay Chuang, Zhubei, TW;

Chih-Yang Chang, Hsinchu, TW;

Ching-Huang Wang, Pingjhen, TW;

Chih-Hui Weng, Tainan, TW;

Tien-Wei Chiang, Taipei, TW;

Meng-Chun Shih, Hsinchu, TW;

Chia Yu Wang, Hsinchu County, TW;

Chia-Hsiang Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 7/58 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G06F 7/588 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01);
Abstract

In some embodiments, a method for generating a random bit is provided. The method includes generating a first random bit by providing a random number generator (RNG) signal to a magnetoresistive random-access memory (MRAM) cell. The RNG signal has a probability of about 0.5 to switch the resistive state of the MRAM cell from a first resistive state corresponding to a first data state to a second resistive state corresponding to a second data sate. The first random bit is then read from the MRAM cell.


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