The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 08, 2023

Filed:

Feb. 18, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Chia-Hua Lin, Hsinchu, TW;

Yao-Wen Chang, Taipei, TW;

Chii-Ming Wu, Hsinchu County, TW;

Cheng-Yuan Tsai, Hsin-Chu County, TW;

Eugene I-Chun Chen, Taipei, TW;

Tzu-Chung Tsai, Hsinchu County, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/60 (2010.01); H01L 33/62 (2010.01); H01L 27/15 (2006.01);
U.S. Cl.
CPC ...
H01L 33/60 (2013.01); H01L 27/156 (2013.01); H01L 33/62 (2013.01);
Abstract

A method for manufacturing reflective structure is provided. The method includes the operations as follows. A metallization structure is received. A plurality of conductive pads are formed over the metallization structure. A plurality of dielectric stacks are formed over the conductive pads, respectively, wherein the thicknesses of the dielectric stacks are different. The dielectric stacks are isolated by forming a plurality of trenches over a plurality of intervals between each two adjacent dielectric stacks.


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