The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 08, 2023

Filed:

Jun. 27, 2022
Applicant:

United Microelectronics Corp., Hsinchu, TW;

Inventors:

Purakh Raj Verma, Singapore, SG;

Su Xing, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/93 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/93 (2013.01); H01L 29/0688 (2013.01); H01L 29/66174 (2013.01);
Abstract

A varactor structure includes a substrate. A first and second gate structure are disposed on the substrate. The first and second gate structures each include a base portion and a plurality of line portions connected thereto. The line portions of each of the first and second gate structures is alternately arranged. A meander diffusion region is formed in the substrate and surrounds the line portions. A first set of contact plugs is planned with at least two columns or rows and disposed on the base portions of the first and second gate structures. A second set of contact plugs is planned with at least two columns or rows and disposed on the meander diffusion region. A first conductive layer is disposed on a top end of the first set of contact plugs. A second conductive layer is disposed on a top end of the second set of contact plugs.


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