The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2023
Filed:
Dec. 17, 2020
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Wen-Che Tsai, Hsinchu, TW;
Min-Yann Hsieh, Kaohsiung, TW;
Hua-Feng Chen, Hsinchu, TW;
Kuo-Hua Pan, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/768 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 29/165 (2006.01); H01L 23/485 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7851 (2013.01); H01L 21/76804 (2013.01); H01L 21/76831 (2013.01); H01L 21/76897 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 29/41766 (2013.01); H01L 29/41791 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 23/485 (2013.01); H01L 29/165 (2013.01); H01L 29/7848 (2013.01); H01L 2029/7858 (2013.01);
Abstract
A method comprises forming a source/drain region on a substrate; forming a dielectric layer over the source/drain region; forming a contact hole in the dielectric layer; forming a contact hole liner in the contact hole; removing a first portion of the contact hole liner to expose a sidewall of the contact hole; etching the exposed sidewall of the contact hole to laterally expand the contact hole; and forming a contact plug in the laterally expanded contact hole.