The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2023
Filed:
Nov. 10, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a gate electrode layer formed over a semiconductor substrate. The semiconductor device structure also includes a gate dielectric layer formed between the gate electrode layer and the semiconductor substrate. In addition, the semiconductor device structure includes a first gate spacer having a hydrophobic surface that covers a first sidewall of the gate electrode layer. The first sidewall of the gate electrode layer extends along a first sidewall of the gate dielectric layer, so that the first sidewall of the gate dielectric layer is separated from the hydrophobic surface of the first gate spacer.