The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2023
Filed:
Jun. 07, 2021
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Martin Christopher Holland, San Jose, CA (US);
Georgios Vellianitis, Heverlee, BE;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 29/51 (2006.01); H01L 29/423 (2006.01); H01L 29/775 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0673 (2013.01); H01L 21/0228 (2013.01); H01L 21/02112 (2013.01); H01L 21/02271 (2013.01); H01L 21/02381 (2013.01); H01L 21/02532 (2013.01); H01L 21/02603 (2013.01); H01L 29/1033 (2013.01); H01L 29/16 (2013.01); H01L 29/42364 (2013.01); H01L 29/42392 (2013.01); H01L 29/518 (2013.01); H01L 29/66439 (2013.01); H01L 29/66795 (2013.01); H01L 29/775 (2013.01); H01L 29/7827 (2013.01); H01L 29/785 (2013.01);
Abstract
Provided herein are semiconductor structures that include germanium and have a germanium nitride layer on the surface, as well as methods of forming the same. The described structures include nanowires and fins. Methods of the disclosure include metal-organic chemical vapor deposition with a germanium precursor. The described methods also include using a NHvapor.