The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 08, 2023

Filed:

Mar. 31, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Myungsam Kang, Hwaseong-si, KR;

Youngchan Ko, Seoul, KR;

Jeongseok Kim, Cheonan-si, KR;

Bongju Cho, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/552 (2006.01); H01L 23/498 (2006.01); H01L 25/10 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49838 (2013.01); H01L 23/49816 (2013.01); H01L 23/49822 (2013.01); H01L 23/552 (2013.01); H01L 25/105 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01);
Abstract

A fan-out type semiconductor package includes: a frame including a cavity and a middle redistribution layer (RDL) structure at least partially surrounding the cavity; a semiconductor chip in the cavity; a lower RDL structure on the frame and electrically connected with the semiconductor chip and the middle RDL structure; an upper RDL structure on the frame and electrically connected with the middle RDL structure; an upper shielding pattern in the upper RDL structure to shield the semiconductor chip from electromagnetic interference (EMI); a lower shielding pattern in the lower RDL structure to shield the semiconductor chip from the EMI; and a side shielding pattern in the middle RDL structure to shield the semiconductor chip from the EMI. The upper shielding pattern and the lower shielding pattern have a thickness of no less than about 5 μm, and the side shielding pattern has a width of no less than about 5 μm.


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