The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 08, 2023

Filed:

Jun. 17, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Angelo Visconti, Appiano Gentile, IT;

Jahanshir J. Javanifard, Carmichael, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01);
U.S. Cl.
CPC ...
G11C 11/2297 (2013.01); G11C 11/221 (2013.01); G11C 11/2275 (2013.01);
Abstract

Methods, systems, and devices for cell data bulk reset are described. In some examples, a write pulse may be applied to one or more memory cells based on an associated memory device transitioning power states. To apply the wire pulse, a first subset of digit lines may be driven to a first voltage and a plate may be driven to a second voltage or a third voltage. While the digit lines and plate are driven to the respective voltages, one or more word lines may be driven to the second voltage or the third voltage. In some instances, the digit lines may be selected (e.g., driven) according to a pattern.


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Visconti, Angelo. (2023). Cell disturb on power state transition (U.S. Patent No. 11721379). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11721379

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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