The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2023

Filed:

Dec. 23, 2021
Applicant:

Kepler Computing Inc., San Francisco, CA (US);

Inventors:

Sasikanth Manipatruni, Portland, OR (US);

Nabil Imam, Atlanta, GA (US);

Ikenna Odinaka, Durham, NC (US);

Rafael Rios, Austin, TX (US);

Rajeev Kumar Dokania, Beaverton, OR (US);

Amrita Mathuriya, Portland, OR (US);

Assignee:

Kepler Computing, Inc., San Francisco, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/23 (2006.01); H03K 19/0948 (2006.01); H03K 19/08 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H03K 19/23 (2013.01); H03K 19/0813 (2013.01); H03K 19/0948 (2013.01); H01L 28/55 (2013.01);
Abstract

Asynchronous circuits implemented using threshold gate(s) and/or majority gate(s) (or minority gate(s)) are described. The new class of asynchronous circuits can operate at lower power supply levels (e.g., less than 1V on advanced technology nodes) because stack of devices between a supply node and ground are significantly reduced compared to traditional asynchronous circuits. The asynchronous circuits here result in area reduction (e.g., 3× reduction compared to traditional asynchronous circuits) and provide higher throughput/mm(e.g., 2× higher throughput compared to traditional asynchronous circuits). The threshold gate(s), majority/minority gate(s) can be implemented using capacitive input circuits. The capacitors can have linear dielectric or non-linear polar material as dielectric.


Find Patent Forward Citations

Loading…