The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2023

Filed:

Apr. 07, 2022
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Purakh Raj Verma, Singapore, SG;

Wen-Shen Li, Singapore, SG;

Ching-Yang Wen, Pingtung County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/66 (2006.01); H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 21/762 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 23/66 (2013.01); H01L 21/565 (2013.01); H01L 21/76243 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 2223/6616 (2013.01);
Abstract

A radiofrequency device includes a buried insulation layer, a transistor, a contact structure, a connection bump, an interlayer dielectric layer, and a mold compound layer. The buried insulation layer has a first side and a second side opposite to the first side in a thickness direction of the buried insulation layer. The transistor is disposed on the first side of the buried insulation layer. The contact structure penetrates the buried insulation layer and is electrically connected with the transistor. The connection bump is disposed on the second side of the buried insulation layer and electrically connected with the contact structure. The interlayer dielectric layer is disposed on the first side of the buried insulation layer and covers the transistor. The mold compound layer is disposed on the interlayer dielectric layer. The mold compound layer may be used to improve operation performance and reduce manufacturing cost of the radiofrequency device.


Find Patent Forward Citations

Loading…