The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2023
Filed:
Aug. 04, 2021
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Shih-Ping Lee, Hsinchu, TW;
Tse-Hsien Wu, Miaoli County, TW;
Pin-Chieh Huang, Hsinchu County, TW;
Yu-Hsiang Chien, Taoyuan, TW;
Yeh-Yu Chiang, Hsinchu, TW;
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Abstract
A method of manufacturing a through silicon via (TSV) is provided in the present invention, including steps of forming a TSV sacrificial structure in a substrate, wherein the TSV sacrificial structure contacts a metal interconnect on the front side of the substrate, performing a backside thinning process to expose the TSV sacrificial structure from the back side of the substrate, removing the TSV sacrificial structure to form a through silicon hole, and filling the through silicon hole with conductive material to form a TSV.