The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2023
Filed:
Dec. 30, 2020
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Changseok Lee, Seoul, KR;
Changhyun Kim, Seoul, KR;
Kyung-Eun Byun, Seongnam-si, KR;
Keunwook Shin, Yongin-si, KR;
Hyeonjin Shin, Suwon-si, KR;
Eunkyu Lee, Yongin-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/26 (2006.01); C01B 32/186 (2017.01); C01B 32/194 (2017.01); C23C 16/513 (2006.01); C23C 16/04 (2006.01); C23C 16/02 (2006.01);
U.S. Cl.
CPC ...
C01B 32/186 (2017.08); C01B 32/194 (2017.08); C23C 16/02 (2013.01); C23C 16/04 (2013.01); C23C 16/26 (2013.01); C23C 16/513 (2013.01);
Abstract
A method of selectively growing graphene includes forming an ion implantation region and an ion non-implantation region by implanting ions locally into a substrate; and selectively growing graphene in the ion implantation region or the ion non-implantation region.