The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2023
Filed:
Apr. 07, 2021
Winbond Electronics Corp., Taichung, TW;
Feng-Jung Chang, Nantou County, TW;
WINBOND ELECTRONICS CORP., Taichung, TW;
Abstract
A semiconductor structure includes a substrate and a buried gate structure in the substrate. The buried gate structure includes a gate dielectric layer, a first work function layer, a barrier layer, and a second work function layer. The gate dielectric layer is formed on the sidewalls and the bottom surface of a trench. The work function layer is formed in the trench and contacts the sidewalls and the bottom surface of the gate dielectric layer. The barrier layer is formed on the top surface of the first work function layer. The second work function layer is formed on the barrier layer, and the sidewall of the second work function layer is separated from the gate dielectric layer by a distance. The semiconductor structure further includes an insulating layer in the trench and on the second work function layer.