The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2023
Filed:
Sep. 13, 2021
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
He Chen, Wuhan, CN;
Zi Qun Hua, Wuhan, CN;
Shu Wu, Wuhan, CN;
Yong Qing Wang, Wuhan, CN;
Liang Xiao, Wuhan, CN;
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Abstract
A fabricating method of a semiconductor device is provided. A temporary semiconductor structure is provided. The temporary semiconductor structure includes a temporary substrate and a conductive layer, the temporary substrate has a first surface, the conductive layer is disposed on the first surface of the temporary substrate, and the conductive layer includes one or more first trace. Then, a recess is formed in the temporary semiconductor structure to form a first semiconductor structure and a first substrate. The recess penetrates through the first substrate and expose the one or more first trace. Thereafter, an input/output pad is formed in the recess and on the one or more first trace.