The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2023
Filed:
Jan. 22, 2021
Tokyo Electron Limited, Tokyo, JP;
Hitoshi Kato, Iwate, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method of depositing a silicon film on a recess formed in a surface of a substrate is provided. The substrate is placed on a rotary table in a vacuum vessel, so as to pass through first, second, and third processing regions in the vacuum vessel. An interior of the vacuum vessel is set to a first temperature capable of breaking an Si—H bond. In the first processing region, SiHgas having a temperature less than the first temperature is supplied to form an SiHmolecular layer on its surface. In the second processing region, a silicon atomic layer is exposed on the surface of the substrate, by breaking the Si—H bond in the SiHmolecular layer. In the third processing region, by anisotropic etching, the silicon atomic layer on an upper portion of an inner wall of the recess is selectively removed.