The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2023
Filed:
Feb. 03, 2021
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/30 (2006.01); H01L 29/78 (2006.01); H10B 51/30 (2023.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H10B 51/30 (2023.02); H01L 29/6684 (2013.01); H01L 29/78391 (2014.09);
Abstract
An integrated circuit device includes a ferroelectric layer that is formed with chlorine-free precursors. This ferroelectric material may be of the composition HFZrO. The ferroelectric layer may be used in a memory device such as a ferroelectric field effect transistor (FeFET). A ferroelectric layer formed with chlorine-free precursors has no chlorine residue. The absence of chlorine ameliorates time-dependent dielectric breakdown (TDDB) and Bias Temperature Instability (BTI).