The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2023
Filed:
Sep. 04, 2020
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Jason M. Brown, Allen, TX (US);
Vijayakrishna J. Vankayala, Allen, TX (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); H01L 25/065 (2023.01); G11C 13/00 (2006.01); G11C 29/00 (2006.01); H10B 63/00 (2023.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); G11C 29/702 (2013.01); G11C 13/003 (2013.01); G11C 13/0026 (2013.01); G11C 13/0028 (2013.01); G11C 2013/0045 (2013.01); H01L 2225/06544 (2013.01); H10B 63/84 (2023.02);
Abstract
A device may include a first die having a first circuit and a second die having a second circuit. The die may be separated by a material layer. The material layer may include multiple through-silicon vias (TSVs) for electrically coupling the first die to the second die. A first TSV of the TSVs may electrically couple the first circuit to the second circuit and a second TSV of the TSVs may include a redundant TSV that electrically bypasses the first TSV to couple the first circuit to the second circuit if a fault is detected in the first TSV.