The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2023
Filed:
Feb. 26, 2019
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Hiroki Miura, Iwate, JP;
Masato Koakutsu, Iwate, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/44 (2006.01); H01L 21/687 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01); H01L 21/677 (2006.01);
U.S. Cl.
CPC ...
C23C 16/4405 (2013.01); C23C 16/4408 (2013.01); C23C 16/4412 (2013.01); C23C 16/45565 (2013.01); C23C 16/52 (2013.01); H01L 21/67748 (2013.01); H01L 21/68764 (2013.01); H01L 21/68771 (2013.01);
Abstract
A film deposition method uses a film deposition apparatus including a source gas supply part and a cleaning gas supply part. In the method, a source gas is adsorbed on a substrate by supplying the source gas from the source gas supply part without supplying a purge gas into the cleaning gas supply part. A reaction product is deposited on the substrate by supplying a reaction gas reactable with the source gas to the substrate on which the source gas is adsorbed without supplying the purge gas into the cleaning gas supply part.