The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 2023

Filed:

Jan. 18, 2021
Applicant:

Globalfoundries U.s. Inc., Santa Clara, CA (US);

Inventors:

Alamgir M. Arif, Saratoga Springs, NY (US);

Sunil K. Singh, Mechanicville, NY (US);

Dewei Xu, Clifton Park, NY (US);

Seung-Yeop Kook, Mechanicville, NY (US);

Roderick A. Augur, Saratoga Springs, NY (US);

Assignee:

GlobalFoundries U.S. Inc., Malta, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5223 (2013.01); H01L 23/5226 (2013.01); H01L 28/60 (2013.01);
Abstract

Embodiments of the disclosure provide an integrated circuit (IC) structure. With capacitor electrodes in different ILD layers. The structure includes a first inter-level dielectric (ILD) layer having a top surface, a first vertical electrode within the first ILD layer, a capacitor dielectric film on a top surface of the first vertical electrode, a second ILD layer over the first ILD layer, and a second vertical electrode within the second ILD layer and on the capacitor dielectric film. The capacitor dielectric film is vertically between the first vertical electrode and the second vertical electrode.


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