The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 2023

Filed:

Feb. 15, 2018
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Michiko Nakaya, Miyagi, JP;

Masanobu Honda, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/67 (2006.01); H01L 21/02 (2006.01); H01L 21/683 (2006.01); C23C 16/505 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); C23C 16/505 (2013.01); H01J 37/32449 (2013.01); H01J 37/32816 (2013.01); H01L 21/0212 (2013.01); H01L 21/02205 (2013.01); H01L 21/02274 (2013.01); H01L 21/67017 (2013.01); H01L 21/67103 (2013.01); H01L 21/6833 (2013.01); H01J 2237/332 (2013.01); H01L 21/0217 (2013.01); H01L 21/02118 (2013.01);
Abstract

A film deposition method includes maintaining an inside of a chamber to have a predetermined pressure, cooling a stage, on which the object to be processed mounts, to have an ultralow temperature of −20° C., and mounting the object to be processed on the stage, supplying a gas including a low vapor pressure material gas of a low vapor pressure material into the inside of the chamber, and generating plasma from the supplied gas including the gas of the low vapor pressure material, and causing a precursor generated from the low vapor pressure material by the plasma to be deposited on a recess part of the object to be processed.


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