The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 2023

Filed:

Jul. 30, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yu-Chen Chang, Hsinchu, TW;

Chien-Wen Lai, Hsinchu, TW;

Chih-Min Hsiao, Taoyuan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/308 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); H01L 21/0332 (2013.01); H01L 21/0338 (2013.01); H01L 21/308 (2013.01); H01L 21/3086 (2013.01); H01L 21/3088 (2013.01); H01L 21/32139 (2013.01); Y10S 438/947 (2013.01); Y10S 438/95 (2013.01);
Abstract

A method for forming a patterned mask layer is provided. The method includes forming a first layer over a substrate. The method includes forming a first strip structure and a second strip structure over the first layer. The method includes forming a spacer layer conformally covering the first strip structure, the second strip structure, and the first layer. The method includes forming a block structure in the first trench. The method includes removing a first portion of the spacer layer, which is under the first trench and not covered by the block structure, and a second portion of the spacer layer, which is over the first strip structure and the second strip structure. The method includes forming a third strip structure in the second trench and the third trench. The method includes removing the block structure. The method includes removing the spacer layer.


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