The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 2023

Filed:

Feb. 18, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Ying-Hua Chen, Hsinchu County, TW;

Hau-Yan Lu, Hsinchu, TW;

Wen-Chen Lu, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/136 (2006.01); G02B 6/12 (2006.01);
U.S. Cl.
CPC ...
G02B 6/136 (2013.01); G02B 6/12002 (2013.01); G02B 2006/12121 (2013.01);
Abstract

A method for fabricating a photonic package device is provided. The method includes patterning a semiconductor layer of a semiconductor-on-insulator (SOI) substrate into a waveguide structure and at least one first semiconductor pillar; forming a metal-dielectric stack over the waveguide structure and the first semiconductor pillar; etching an opening in the metal-dielectric stack to expose the first semiconductor pillar; etching an insulator layer of the SOI substrate to form at least one insulator cap below the first semiconductor pillar; and etching a base semiconductor substrate of the SOI substrate to form at least one second semiconductor pillar below the insulator cap.


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