The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2023
Filed:
Dec. 12, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Yen-Ting Chen, Taichung, TW;
Yi-Hsiu Liu, Taipei, TW;
Wei-Yang Lee, Taipei, TW;
Feng-Cheng Yang, Hsinchu County, TW;
Yen-Ming Chen, Hsin-Chu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method includes providing dummy gate structures disposed over a device region and over an isolation region adjacent the active region, first gate spacers disposed along sidewalls of the dummy gate structures in the active region, and second gate spacers disposed along sidewalls of the dummy gate structures in the isolation region, removing top portions of the second, but not the first gate spacers, forming a first dielectric layer over the first gate spacers and remaining portions of the second gate spacers, replacing the dummy gate structures with metal gate structures after the forming of the first dielectric layer, removing the first gate spacers after the replacing of the dummy gate structures, and forming a second dielectric layer over top surfaces of the metal gate structures and of the first dielectric layer.