The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2023
Filed:
Mar. 21, 2022
Micron Technology, Inc., Boise, ID (US);
Kishore K. Muchherla, Fremont, CA (US);
Niccolo' Righetti, Boise, ID (US);
Jeffrey S. McNeil, Jr., Nampa, ID (US);
Akira Goda, Setagaya, JP;
Todd A. Marquart, Boise, ID (US);
Mark A. Helm, Santa Cruz, CA (US);
Gil Golov, Backnang, DE;
Jeremy Binfet, Boise, ID (US);
Carmine Miccoli, Boise, ID (US);
Giuseppina Puzzilli, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A system includes a memory device having a plurality of groups of memory cells and a processing device communicatively coupled to the memory device. The processing device is be configured to read a first group of memory cells of the plurality to determine a calibrated read voltage associated with the group of memory cells. The processing device is further configured to determine, using the calibrated read voltage associated with the first group of memory cells, a bit error rate (BER) of a second group of memory cells of the plurality. Prior to causing the memory device to perform a copyback operation on the plurality of groups of memory cells, the processing device is further configured to determine whether to perform a subsequent read voltage calibration on at least the second group of the plurality based, at least partially, on a comparison between the determined BER and a threshold BER.