The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2023
Filed:
Jun. 03, 2021
Micron Technology, Inc., Boise, ID (US);
Lingming Yang, Meridian, ID (US);
Xuan Anh Tran, Irvine, CA (US);
Karthik Sarpatwari, Boise, ID (US);
Francesco Douglas Verna-Ketel, Boise, ID (US);
Jessica Chen, Boise, ID (US);
Nevil N. Gajera, Meridian, ID (US);
Amitava Majumdar, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Systems, methods and apparatus to program a memory cell to have a threshold voltage to a level representative of one value among more than two predetermined values. A first voltage pulse is driven across the memory cell to cause a predetermined current to go through the memory cell. The first voltage pulse is sufficient to program the memory cell to a level representative of a first value. To program the memory cell to a level representative of a second value, a second voltage pulse, different from the first voltage pulse, is driven across the memory cell within a time period of residual poling in the memory cell caused by the first voltage pulse.