The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2023
Filed:
Apr. 13, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Po-Hsun Huang, Tainan, TW;
Po-Han Wang, Kaohsiung, TW;
Ing-Ju Lee, Tainan, TW;
Chao-Lung Chen, Tainan, TW;
Cheng-Ming Wu, Tainan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Methods of fabricating semiconductor devices are provided. The method includes forming an interconnect structure over a substrate. The method also includes forming a passivation layer over the interconnect structure. The method further includes forming an opening in the passivation layer to expose a portion of the interconnect structure. In addition, the method includes sequentially forming a lower barrier film, an upper barrier film, and an aluminum-containing layer in the opening. The lower barrier film and the upper barrier film are made of metal nitride, and the upper barrier film has a nitrogen atomic percentage that is higher than a nitrogen atomic percentage of the lower barrier film and has an amorphous structure.