The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2023

Filed:

Aug. 06, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Ruilong Xie, Niskayuna, NY (US);

Alexander Reznicek, Troy, NY (US);

Chanro Park, Clifton Park, NY (US);

Chun-Chen Yeh, Danbury, CT (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823807 (2013.01); H01L 21/823857 (2013.01); H01L 21/823878 (2013.01); H01L 27/092 (2013.01); H01L 29/0649 (2013.01);
Abstract

A method is presented for reducing capacitance coupling. The method includes forming a nanosheet stack including alternating layers of a first material and a second material over a substrate, forming a source/drain epi for a first device, depositing a sacrificial material over the source/drain epi, forming a source/drain epi for a second device over the sacrificial material, and removing the sacrificial material to define an airgap directly between the source/drain epi for the first device and the source/drain epi for the second device.


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