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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11688644 B1

PDFFull Text
Date of Patent:
Jun. 27, 2023

Filed:

Apr. 30, 2021

Fin isolation structure for finfet and method of forming the same

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chu-An Lee, Hsinchu, TW;

Chen-Hao Wu, Hsinchu, TW;

Peng-Chung Jangjian, Hsinchu, TW;

Chun-Wen Hsiao, Hsinchu, TW;

Teng-Chun Tsai, Hsinchu, TW;

Huang-Lin Chao, Hillsboro, OR (US);

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Monica D Harrison

Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 21/76 (2006.01); H01L 29/06 (2006.01); H01L 27/088 (2006.01); H01L 21/762 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823481 (2013.01); H01L 21/76224 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/0649 (2013.01); H01L 21/31053 (2013.01);
Abstract

A semiconductor device structure is provided. The semiconductor device structure includes a substrate having adjacent first and second fins protruding from the substrate. A first gate structure and a second gate structure are across the first and second fins, respectively. An insulating structure is formed between the first gate structure and the second gate structure and includes a first insulating layer separating the first fin from the second fin, a capping structure formed in the first insulating layer, and a second insulating layer covered by the first insulating layer and the capping structure.

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Quick Actions:

Lee, Chu-An. (2023). Fin isolation structure for finfet and method of forming the same (U.S. Patent No. 11688644). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11688644

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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