The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2023
Filed:
Jan. 07, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yu-Chun Shen, Tainan, TW;
Chi-Chung Jen, Kaohsiung, TW;
Ya-Chi Hung, Kaohsiung, TW;
Yu-Chu Lin, Tainan, TW;
Wen-Chih Chiang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
In some implementations, one or more semiconductor processing tools may deposit a first dielectric layer on a substrate of a semiconductor device. The one or more semiconductor processing tools may deposit a floating gate on the first dielectric layer. The one or more semiconductor processing tools may deposit a second dielectric layer on the floating gate and on the substrate of the semiconductor device. The one or more semiconductor processing tools may deposit a first control gate on a first portion of the second dielectric layer. The one or more semiconductor processing tools may deposit a second control gate on a second portion of the second dielectric layer, wherein a third portion of the second dielectric layer is between the first control gate and the floating gate and between the second control gate and the floating gate.