The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2023
Filed:
Oct. 16, 2020
United Microelectronics Corp., Hsinchu, TW;
Chun-ya Chiu, Tainan, TW;
Chih-kai Hsu, Tainan, TW;
Chin-hung Chen, Tainan, TW;
Chia-jung Hsu, Tainan, TW;
Ssu-i Fu, Kaohsiung, TW;
Yu-hsiang Lin, New Taipei, TW;
Chun-Ya Chiu, Tainan, TW;
Chih-Kai Hsu, Tainan, TW;
Chin-Hung Chen, Tainan, TW;
Chia-Jung Hsu, Tainan, TW;
Ssu-I Fu, Kaohsiung, TW;
Yu-Hsiang Lin, New Taipei, TW;
UNITED MICROELECTRONICS CORP., Hsinchu, TW;
Abstract
The disclosure discloses a structure of high-voltage (HV) transistor which includes a substrate. An epitaxial doped structure with a first conductive type is formed in the substrate, wherein a top portion of the epitaxial doped structure includes a top undoped epitaxial layer. A gate structure is disposed on the substrate and at least overlapping with the top undoped epitaxial layer. A source/drain (S/D) region with a second conductive type is formed in the epitaxial doped structure at a side of the gate structure. The first conductive type is different from the second conductive type.