The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 20, 2023

Filed:

Jul. 30, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Kalyan Chakravarthy C. Kavalipurapu, Hyderabad, IN;

Jung Sheng Hoei, Newark, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2006.01); G11C 16/34 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 11/5642 (2013.01); G11C 16/3427 (2013.01);
Abstract

Disclosed in some examples are methods, systems, devices, and machine-readable mediums for compensating for charge loss effects. In some examples, a charge loss may be estimated by a charge loss monitor for a particular unit of a NAND device and may be utilized to select a charge loss compensation scheme. The charge loss may be estimated by the charge loss estimation process by determining a reference read voltage and calculating a bit count resulting from a read at that reference read voltage. The number of bits returned may be used to select the particular charge loss compensation scheme.


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Kavalipurapu, Kalyan Chakravarthy C.. (2023). Charge loss compensation (U.S. Patent No. 11682462). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11682462

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