logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11678483 B1

PDFFull Text
Date of Patent:
Jun. 13, 2023

Filed:

Jan. 28, 2021

Memory arrays and methods used in forming a memory array

Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Bharat Bhushan, Singapore, SG;

Chris M. Carlson, Nampa, ID (US);

Collin Howder, Meridian, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:

Wells St. John P.S.

Primary Examiner:

Monica D Harrison

Int. Cl.
CPC ...
H01L 27/11556 (2017.01); H10B 41/27 (2023.01); G11C 8/14 (2006.01); G11C 16/04 (2006.01); G06F 3/06 (2006.01); H10B 41/35 (2023.01); H10B 41/41 (2023.01); H10B 41/60 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H10B 41/27 (2023.02); G06F 3/0688 (2013.01); G11C 8/14 (2013.01); G11C 16/0466 (2013.01); H10B 41/35 (2023.02); H10B 41/41 (2023.02); H10B 41/60 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02); H10B 43/40 (2023.02);
Abstract

A method used in forming a memory array comprising strings of memory cells comprises forming a stack comprising vertically-alternating insulative tiers and wordline tiers. First charge-blocking material is formed to extend elevationally along the vertically-alternating tiers. The first charge-blocking material has k of at least 7.0 and comprises a metal oxide. A second charge-blocking material is formed laterally inward of the first charge-blocking material. The second charge-blocking material has k less than 7.0. Storage material is formed laterally inward of the second charge-blocking material. Insulative charge-passage material is formed laterally inward of the storage material. Channel material is formed to extend elevationally along the insulative tiers and the wordline tiers laterally inward of the insulative charge-passage material. Structure embodiments are disclosed.

Find Patent Forward Citations

Loading…