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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11677028 B1

PDFFull Text
Date of Patent:
Jun. 13, 2023

Filed:

Jul. 08, 2020

Pmos finfet

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Wei-Yang Lee, Taipei, TW;

Chia-Chun Lan, Taipei, TW;

Chia-Ling Chan, Taipei, TW;

Feng-Cheng Yang, Zhudong Township, TW;

Yen-Ming Chen, Chu-Pei, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Haynes and Boone, LLP

Primary Examiner:

Shahed Ahmed

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/161 (2006.01); H01L 29/08 (2006.01); H01L 29/167 (2006.01); H01L 29/66 (2006.01); H01L 21/311 (2006.01); H01L 27/092 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7851 (2013.01); H01L 21/31111 (2013.01); H01L 21/823807 (2013.01); H01L 21/823821 (2013.01); H01L 27/0924 (2013.01); H01L 29/0847 (2013.01); H01L 29/161 (2013.01); H01L 29/167 (2013.01); H01L 29/66795 (2013.01); H01L 29/66803 (2013.01); H01L 21/823814 (2013.01);
Abstract

A semiconductor device includes a fin structure disposed on a substrate, a shallow-trench isolation (STI) region on opposite sides of the fin structure, dielectric fin sidewall structures extending along sides of the fin structure and extending from a top of the STI region partially up the fin structure, and a source/drain region disposed within an upper portion of the fin structure. A bottom surface of the source/drain region contacts a top surface of the dielectric fin sidewall.

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