The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2023
Filed:
Aug. 25, 2017
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Mark Van Dal, Linden, BE;
Gerben Doornbos, Leuven, BE;
Georgios Vellianitis, Heverlee, BE;
Tsung-Lin Lee, Hsinchu, TW;
Feng Yuan, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
Various strained channel transistors are disclosed herein. An exemplary semiconductor device includes a substrate and a fin structure disposed over the substrate. The fin structure includes a first epitaxial layer disposed on the substrate, a second epitaxial layer disposed on the first epitaxial layer, and a third epitaxial layer disposed on the second epitaxial layer. The second epitaxial layer includes a relaxed transversal stress component and a longitudinal compressive stress component, and the third epitaxial layer has uni-axial strain. A gate structure is disposed on a channel region of the fin structure, such that the gate structure interposes a source region and a drain region of the fin structure.