The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2023
Filed:
Apr. 23, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semiconductor structure includes a first die, second dies coupled to and on the first die, a dielectric layer on the first die and covering each second die, and through dielectric vias (TDVs) coupled to and on the first die. The first die includes a bonding dielectric layer and bonding features embedded in and leveled with the bonding dielectric layer. An array of second dies is arranged in a first region of the first die. Each second die includes a bonding dielectric layer and a bonding feature embedded in and leveled with the bonding dielectric layer. The bonding dielectric layer and the bonding feature of each second die are respectively bonded to those of the first die. The TDVs are laterally covered by the dielectric layer in a second region of the first die which is connected to the first region and arranged along a periphery of the first die.